Атомные и электронные процессы на поверхности полупроводников и границах раздела металл-полупроводник
Диссертация
В качестве объектов исследования рассмотрены поверхности кремния, как типичного полупроводника ковалентного типа, и диоксида титана в модификации рутила, в котором межатомная связь имеет ионо-ковалеитный характер. Важно отметить, что и кремний и диоксид титана являются модельными системами, демонстрирующими наиболее общие черты, характерные для каждого типа полупроводников На примере данных… Читать ещё >
Содержание
- 1. Адсорбция неметаллов на поверхности кремния
- 1. 1. Введение
- 1. 2. Формирование ПФ Si (lll)(ч/З х /3)Д30°-В
- 1. 3. Взаимодействие атомов фосфора на Si (100)
- 1. 4. Адсорбция и диссоциация молекул триметилфосфииа на Si (lll)7x
- 1. 5. Атомное строение ПФ Si (100) ос (4×4)-В
- 1. 6. Основные результаты
- 2. Сегрегация неметаллов вблизи поверхности кремния
- 2. 1. Введение
- 2. 2. Сегрегация бора на Si (lll): кластерный подход
- 2. 3. Се1регация бора на Si (lll): зонный подход
- 2. 4. Сегрегация бора на Si (100): кластерный подход
- 2. 5. Сегрегация бора па Si (100): зонный подход
- 2. 6. Сегрегация фосфора на Si (100)
- 2. 7. Основные результаты
- 3. Адсорбция металлов на поверхности кремния
- 3. 1. Введение
- 3. 2. Адсорбционная система Al/Si (111)
- 3. 2.1 Электронная структура ПФ Si (lll)(v/3 х уД) ЯЖ-А
- 3. 2 2 Электронная структура ПФ Si (lll)(/7 х y/7)R19 Г-А
- 3. 2. 3. 7-фаза Al-Si (lll)
- 3. 2. 4. Процессы в атомной и электронной структуре при смене ПФ в системе Al/Si (l 11)
- 3. 3. Поведение неупорядоченного монослоя А1 на Si (100)2x
- 3. 4. Адсорбционная система Tl/Si (100)
- 3. 4. 1. ПФ а-2×2-Т
- 3. 4. 2. ПФ /?-2×2-Т
- 3. 4. 3. ПФ 7−2Х2-Т
- 3. 4. 4. ПФ 2 xl-Tl при комнатной и пониженной температурах
- 3. 4. 5. Смена ПФ в системе Tl/Si (100) и сопутствующие процессы в атомной и электронной структуре
- 3. 5. Адсорбционная система Au/Si (lll)
- 3. 5. 1. Адсорбция изолированных атомов Аи на Si (lll)
- 3. 5. 1. 1. Электронная структура и спектры ФЭС
- 3. 5. 2. Перемешивание на границе раздела Au/Si (lll) при монослойном покрытии Аи
- 3. 6. Основные результаты
- 4. Электронная структура системы металл—кремний
- 4. 1. Введение
- 4. 2. Влияние атомного строения границы раздела металл—кремний на электронную структуру системы
- 4. 2. 1. Al/Si (l 11)
- 4. 2. 2. Au/Si (lll)
- 4. 2. 2. 1. Тонкая пленка Аи на Si (lll)
- 4. 2. 2. 2. Сшшцидоподобное соединение Ai^Si на Si (lll)
- 4. 3. Влияние примеси на величину барьера Шоттки
- 4. 3. 1 Легирование кремния в системе Al/Si (lll)
- 4. 3. 2. Управление величиной барьера Шогтки при вторичном легировании кремния в системе Al/n-S
- 4. 4. Основные результаты
- 5. 1. Введение
- 5. 2. Моделирование спектров СТС ПФ Si (lll)(V5 х /3)Л30°-В
- 5. 3. Влияние взаимодействия игла-образец на данные СТС
- 5. 4. Туннельный ток в наноразмерном контакте Al/Si (lll)
- 5. 5. Основные результаты
- 6. 1. Введение
- 6. 2. Тестовые результаты для объемного диоксида титана и поверхности ТЮ2(1 Ю)
- 6. 3. Поведение поверхности ТЮгЩО) при ненулевых температурах
- 6. 4. Атомная релаксация ступени на ТЮ2(И0)
- 6. 5. Разрушение ступени на ТЮ2(1Ю) при Т = 500 К
- 6. 6. Основные результаты
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